A semiconductor equipment high temperature creep preparing a substrate with an anti-ground

The present invention relates to a process for the preparation of pure aluminum coating on metal or alloy substrate, particularly to a method for preparing a semiconductor equipped with the high temperature creep resistance grounding of the substrate. The preparation method comprises the following steps: (1) pre-treatment ground substrate base; and (2) the substrate is placed on a special fixture; (3) cold spraying pure aluminum; (4) after spraying heat treatment; (5) coated surface subsequent processing. Preparation process of the invention can be formed on various metals or alloys of pure aluminum coated substrate, so that the product while maintaining the performance of the substrate on a substrate, such as high temperature creep properties, and also that the surface of each aluminum coating kind of performance.