Method for measuring appearance of MEMS (Micro Electro Mechanical System) device based on infrared light interference technique

The invention relates to appearance testing of an MEMS (Micro Electro Mechanical System) device, in particular to a method for measuring the appearance of an MEMS device based on an infrared light interference technique, which solves the problems of difficult operation, larger measurement error and the like when the structure appearance of the MEMS device is measured by the traditional infrared light interference technique. The method for measuring the appearance of the MEMS device based on the infrared light interference technique comprises the following steps of: (1) preparing the MEMS device to be measured before measurement; (2) measuring the MEMS device to be measured by using an interferometer, and arranging a semiconductor wafer, the material quality of which is the same as the material quality of the MEMS device to be measured in front of an optical lens of a reference path. The method is reasonable and convenient in operation, can accurately embody the appearance condition of the microstructure of the MEMS device, is beneficial to quality evaluation of the MEMS device, provides a basis for improving the machining technology and the machining processes of the MEMS device, promotes the improvement of the quality and the using performance of the MEMS device, and is suitable for the fields of reconstruction of the internal structure of the MEMS device based on semiconductor materials, evaluation of the roughness of the bonding interface of a bonding sample, real-time and on-line detection of the MEMS technology, and the like.