1/f noise in a quasi‐one‐dimensional channel

We perform a noise‐spectroscopy study on electron transport through a narrow split‐gate GaAs/AlGaAs channel. The noise is found to be dominated by a 1/f contribution, which is interpreted to originate from time‐dependent fluctuations in the electrostatic potential in the channel due to electron trapping and detrapping processes with a broad distribution of time constants.