Analytical photo leak current model of low-temperature CW laser lateral crystallization (CLC) poly-Si TFTs

We found that the absorption of backlight by TFTs is insensitive to poly-Si thickness t/sub Si/, while photo leak current of TFTs depends linearly on t/sub Si/. We modeled these phenomena by assuming that the Q electron-hole pairs generated recombine at both interfaces of poly-Si. According to this model the photo leak current depends linearly on t/sub Si/ and Q is independent of t/sub Si/. Our model also explained that the accumulation of hole charges degrades the subthreshold swing by increasing the channel potential increase.