Inductive plasma source for thin film growth

The authors are developing a tool for semiconductor thin film growth based on the plasma immersion ion implantation technique. This compact, inexpensive, high throughput implanter will allow separate control of dose rate, ion energy and substrate temperature while mitigating charging effects. The present system employs a cylindrical inductive plasma source (35 cm diameter, 400 kHz, 500 W) which has been characterized using Langmuir and magnetic probes. Radial and axial profiles of plasma density and electron temperature along with measurements of induced plasma current will be presented for a range of neutral pressure and rf power. Comparisons will be made to a model of inductive source operation. Initial results of oxide growth on silicon and III-V materials will be presented.