0.1 pm InGaAs/lnAIAs/lnP HEMT MMlCs -a Flight Qualified Technology

um lnGaAs/lnA1AsllnP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H, poisoning. The three-temperature lifetest (TI =215"C, T2=23@C and T3=2.5@C) of 0.1 um InGaAs/lnAlAs/lnP HEMT MMICs in a N2 ambient demonstrates an activation energy (Ea) as high as 1.9 eV, czchieving a projected median-time-to-fnilure (MTF) = 1x10' hours at a 125°C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 um InP HEMTs exhibit less sensitivitr, to H, exposure than 0.1 um GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 iim InGaAslInAIAs/InP MMICs technology for flight applications.