Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
2016
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioni et al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
81
References
28
Citations
NaN
KQI