Irradiation effects on the high field behaviour of very thin silica layers

Abstract Irradiation effects on the electrical characteristics under high field stress of nitrided and non-nitrided very thin silicon oxide films are studied. The generation of new electron traps during constant current stress is increased for irradiated samples. This enhancement is more significant for pure silicon dioxide when compared to nitrided oxide. Further, the correlation between charge to breakdown and traps generation rate during constant current injection is verified and remains valid after irradiation.