Preparation, electrical properties and annealing of ZnGeAs2

Abstract Crystals of ZnGeAs 2 have been grown from solution (Zn x As y solvent). Electrical properties of crystals before and after annealing in arsenic or phosphorus vapors are reported. The crystals are always ( p ) type. Assuming the electrical properties of the as grown crystals to be due to the zinc and arsenic vacancies, a mechanism is given to explain the change in free carrier concentration during annealing. A good fit is obtained between the observed and the calculated values.