Hazard identification and characterization of organometals in growing III–V semiconductors for the production of photovoltaic cells

Abstract In the production of III–V thin film semiconductors by metallorganic chemical vapor deposition, trimethylarsine and isobutylphosphine can replace arsine and phosphine, respectively, as the group V source materials. In the same process, bis(methylcyclopentadienyl)magnesium has been shown to be a good p-dopant. Although these organometallic liquids have the potential for better performance than the earth metals, and are safer in processing than hydride gases, they are not without risk to health and property. The limited data that are available indicate that these compounds are moderately toxic, and have acute and chronic effects on humans through inhalation, ingestion, and direct physical contact. Their use in large-scale production presents potential fire hazards because they ignite spontaneously in air at ambient temperatures. The fumes emitted from their combustion may contain toxic substances which are hazardous in the workplace and its surrounding areas. Because there are no safety guidelines, exposure limits or government regulations established specifically for these compounds, they should be used only under prudent practices for handling chemical substances of unknown toxicity.