ZnIn2S4 as a window in heterojunction solar cells

Abstract Single crystals of n-type ZnIn 2 S 4 with a resistivity between 0.8 and 10 Ωcm were prepared by annealing them under a high manganese pressure. These crystals are viewed as potential windows in the preparation of heterojunction solar cells which have chalcopyrite compounds as p-type absorbers. The n-ZnIn 2 S 4 /p-CuInSe 2 system has been characterized and discussed.