Fabrication, Study of Electrical Properties, and FTIR Spectroscopy of the Al/Al 2 O 3 /Si Device

Thin film of Al 2 O 3 was deposited on the p-Si substrate using thermal evaporation method to deposit Al on p-Si. Furthermore, a chemical vapor deposition method (CVD) was used for the oxidation of Al/p-Si in order to synthesize Al 2 O 3 /p-Si structure. The paper is focused on the formation of Al 2 O3, the bands of Al-O and some bands formed with it through growth operation by analyzing spectra of the Fourier transform infrared (FTIR) spectroscopy. The bands of the Al-O were found at the wavenumber 611 cm-1, which indicates that Al 2 O 3 has been formed. Also SiO x band was found at the wavenumber 1000-1100 cm-1, which refers to the construction of a thin interfacial oxide layer between the Si and the Al 2 O 3 layer and other bands. The current-voltage (I-V) characteristics showed that a reverse leakage current was greater than the forward leakage current. The capacitance-voltage (C-V) measurements were also performed on the samples, revealing the improvement of results.