Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

Graphene can be prepared by annealing of SiC wafer. That allows large scale patterning by standard UV photolithography. Unfortunately SiC substrate does not allow backgating in contrast to graphene on silicon substrate (with thin silicon dioxide layer). The major challenge is to find suitable dielectric layer that can be used for electrostatic gating without significant influence on carrier mobility or another properties of graphene.