Assist feature aware double patterning decomposition
2008
Double patterning has gained prominence as the most likely lithographic methodology to help keep Moore's law going
towards 32nm 1/2 pitch lithography. While solutions, to date, have focused mainly on gap splitting to avoid minimum
spacing violations, the decomposition should, ideally, also attempt to optimize the process window of the decomposed
masks. A major contributor to process window sensitivity is the correct placement of sub-resolvable assist features.
These features are placed once the polygons of each mask are defined, i.e. post decomposition. If some awareness of this
downstream process step is made available to the double patterning decomposition stage, then a more robust
decomposition can be achieved.
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