Optical Properties of A1 1-x In x N Thin film on GaN Grown by MOVPE

We studied optical properties of films. Films were grown on GaN by metalorganic vapor-phase epitaxy. The AlInN layer was grown on GaN layer with an -AlOsubstrate. X-ray diffraction, optical absorption spectroscopy, photoluminescence(PL) and reflection high energy electron diffraction(RHEED) measurements of AlInN showed that the crystalline quality of layer was improved around x