Energy dissipation of heated electrons in silicon dioxide layers

The field and thickness dependence of the conductivity, charge state, and electroluminescence of Si-SiO2 structures is investigated with the aim of studying the energy-dissipation mechanisms of electrons heated by an electric field in SiO2 films. It is shown that, as well as the previously known dissipation channels (interaction with the phonon subsystem and impact ionization in the SiO2 volume, with characterisic energy losses e1 9 eV, respectively), account must also be taken of processes of defect excitation at the Si-SiO2 boundary, which are accompanied by radiative relaxation in the electroluminescence bands and characterized by “intermediate” energy-loss values (e1

Keywords:

• Atomic physics
• Phonon
• Impact ionization
• Dissipation
• Radiative transfer
• Physics
• Electroluminescence
• Electron
• Silicon
• Electric field
• Excitation

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