4 Mbit embedded FRAM for high performance System on Chip (SoC) with large switching charge, reliable retention and high imprint resistance

A 0.18 /spl mu/m 4 Mbit FRAM for high performance System on Chip (SoC) was developed. Large polarization and high reliability were achieved with a [111] oriented MOCVD PZT. We also developed new capacitor fabrication technology, recessed Ir barriers and high temperature one mask etching. We achieved an embedded FRAM with only two additional masks for a conventional CMOS process.