Implementation ofRobust Nickel Alloy Salicide Process forHigh-Performance 65nmSOICMOSManufacturing

silicide byabout 5%forevery % ofPtintroduced intheNi.Results Addition ofPttoNisilicide produces arobust [NixPt(l,x)]Si, ofTEM sections (Figs. 4and5)showasmooth NiXPt(lX-)Si inwhich whichshowsanimproved morphological stability, animportant thePtisdistributed throughout thefilmwithan increasing reduction inencroachment defect density, areduced tendency to concentration atthetopofthesilicide film. formNiSi2 andsignificant variations inmonosilicide texture without Theaddition ofPttothesilicide isnotdetrimental tothedevice degrading thedevice performance ortheyield ofhigh-performance performance. NiSihasbeenshowntohaveimproved PMOS 65nm SOItechnologies. transistor characteristics while notdegrading theNMOS transistor. Figure 10showsthedevice characteristics ofNFET devices and