Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb

Abstract Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current–voltage and capacitance–voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories.