The transport equation approach for the simulation of charge state fluctuation effects during ion penetration into solids

Abstract A model for high-energy ion implantation taking account of ion charge state fluctuations is proposed and the corresponding forward and backward kinetic equations are formulated. The results of simulation ny numerical solution of the transport equations are given. It is shown that taking account of high-energy fluctuations results in an increase in straggling of the implanted impurity and radiation defect distributions and gives better agreement with experiments than the standard simulations.