The effect of substrate heating on the tunability of rf-sputtered Bi2O3-ZnO-Nb2O5 thin films

Reactively rf-sputtered Bi2O3-ZnO-Nb2O5 (BZN) thin films were prepared on Pt(111)/TiO2/SiO2/Si with substrate heating. The effects of substrate heating on the structures, morphologies, dielectric properties, and voltage-tunable dielectric properties of the films were investigated. With heating, the BZN thin films could be deposited in crystalline form as the cubic pyrochlore phase. The amounts of secondary phases, such as zinc niobate and bismuth niobate, depended on the substrate temperature. The more compounding of the BZN crystalline phase proceeded at deposition, the less formation of secondary phases and stoichiometric change occurred after post-annealing. Therefore, improvement of the dielectric constant and tunability of thin films by grain-size enlargement might be possible with proper substrate heating and post-annealing. The BZN thin films sputtered with a substrate temperature of 550 °C and annealed at 800 °C showed a maximum tunability of 26.5% at a dc bias field of 1000 kV/cm and measurement frequency of 1 MHz.