Fabrication of high performance APCVD a-Si TFT using ion doping

Abstract We have studied P ion doping of atmospheric pressure (AP) CVD a-Si. The effect of the temperature of ion doping on the electrical conductivity was investigated. The conductivity increases with doping temperature up to 350°C and then decreases, giving a maximum value of 6×10 −2 S/cm at 350°C when the acceleration voltage and doping time were 6kV and 90s, respectively. The ion-doped a-Si layer was used to fabricate inverse staggered type APCVD a-Si thin film transistors (TFTs). We obtained a field effect mobility of 1.0 cm 2 /Vs and a threshold voltage of 6.3V.