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Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge
Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge
2019
Hiromasa Okita
Takuya Hoshii
Taihei Matsuhashi
Indraneel Sanyal
Yu-Chih Chen
Ying-Hao Ju
Akira Nakajima
Shin-Ichi Nishizawa
Hiromichi Ohashi
Kuniyuki Kakushima
Hitoshi Wakabayashi
Jen-Inn Chyi
Kazuo Tsutsui
Keywords:
Triethylgallium
Optoelectronics
Materials science
algan gan
Correction
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