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A study on precise extraction of parasitic resistances in InGaAs HEMTs
A study on precise extraction of parasitic resistances in InGaAs HEMTs
2021
Keigo Yaguchi
Tomotaka Hosotani
Y. Umeda
Kyoya Takano
Tetsuya Suemitsu
Akira Satou
Keywords:
Extraction (chemistry)
Parasitic element
Extremely high frequency
High-electron-mobility transistor
Optoelectronics
Materials science
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