Optical orientation of electron spins in GaAs L-valleys
2014
We report on optical orientation experiments in GaAs epilayers with excitation energies in the 3 eV region,
leading the photo-generation of spin-polarized electrons in the satellite L valley. From both continuous-wave and
time resolved measurements we show that a significant fraction of the electron spin memory can be conserved
when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds
of meV. A typical L -valley electron spin relaxation time of 200 fs is deduced, in agreement with theoretical
calculations.
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