6~18 GHz宽带GaN功率放大器MMIC

A 6~18 GHz broadband GaN MMIC power amplifier with three-stage topology was developed. The amplifier was designed in micro-strip technology and reactance matching network was adopted to reduce insert loss of the output stage and improve the MMIC's associated efficiency. The amplifier provided a flat small signal gain of 25 dB and a pulsed saturated output power of 6 W at V(subscript DS)=28 V over the 6 GHz to 18 GHz frequency range. A peak output power of 10 W with power added efficiency of 21% was achieved at 14 GHz. The amplifier chip with size of 2.3 mm×1.1 mm is processed by 76.2 mm, 0.25 μm GaN HEMT MMIC technology in Nanjing Electronic Devices Institute.