Growth and characterization of InAlGaAs(P)InGaAs(P) MQW structures

Abstract We report for the first time on the growth of high-quality tensile-strained InAlGaAs InGaAsP multi-quantum wells on InP as well as bulk InAlGaAsP and InAlGaAsP InGaAsP multi-quantum wells on InP by LP-MOVPE. These structures show very good X-ray rocking curves and photoluminescence spectra and can be an interesting alternative for commonly used InGaAsP InGaAsP and InAlGaAs InAlGaAs structures.