Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

The influence of carbon concentration on the low-frequency noise (LF noise) of Si∕SiGe:C∕Si heterojunction bipolar transistors (HBTs) is investigated. When carbon is incorporated into these HBTs, representative noise spectra of the input current spectral density SIB show significant generation-recombination (GR) components. On the other hand, for transistors without carbon incorporation, no GR components were observed. When only 1∕f noise component is observed, the 1∕f noise level is found to be independent of the carbon concentration and the associated figure of merit of the normalized noise magnitude KB has a very good value of ∼4×10−10μm2. In order to relate the 1∕f noise and the high-frequency performance of the transistor, we studied and modeled the figure of merit defined as the ratio fc∕fT (fc is the low-frequency corner frequency and fT the unity current-gain frequency). Then we performed a detailed analysis of the GR components associated with the presence of the carbon. We found that the observe...