Method of fabricating semiconductor device having three-dimensional stacked structure

A method of fabricating a semiconductor device having a three-dimensional stacked structure is provided, which realizes easily the electrical interconnection between the stacked semiconductor circuit layers along the stacking direction by using buried interconnections. The trench, the inner wall face of which is covered with the insulating film, is formed in the surface of the semiconductor substrate of the first semiconductor circuit layer. Then, the inside of the trench 13 is filled with a conductive material, thereby forming the conductive plug. Next, the desired semiconductor element is formed on the surface or in the inside of the substrate in such a way as not to overlap with the trench, and the multilayer wiring structure is formed over the semiconductor element through the interlayer insulating film. Thereafter, the bump electrode, which is electrically connected to the plug, is formed on the surface of the multilayer wiring structure. After the substrate is fixed to the support substrate using the electrode, the substrate is selectively removed from its backside, thereby exposing the insulating film to the back side of the substrate. The insulating film thus exposed to the back side of the substrate is selectively removed to expose the plug, and the electrode is formed on the end of the plug.