Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide

Epitaxial growth of CdSe has been achieved on (111) GaAs by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques.