Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications

Multilayer SnSb4/ZnSb (SS/ZS) thin films have been investigated for phase change applications. The composition [SS (4 nm)/ZS (10 nm)]4 exhibits a high crystallization temperature (T c ~ 230 °C), high data retention temperature for 10 years (T 10-yr ~ 152 °C), small density change, and low thermal conductivity. A cell based on [SS (4 nm)/ZS (10 nm)]4 achieves fast SET/RESET switching speed (~10 ns) and low reset power consumption (the energy for RESET operation = 9.6 × 10−13 J).