Method for manufacturing light-emitting diodes

The present invention relates to a method of fabricating a light emitting diode, comprising: a front-end-prepared electrode formed semi-chemical forming step and a cutting step of the production of an electrode, the step of chemical deposition comprising: providing a solution which is a base and a high oxygen content of the solution; and, soaking, dipping the semi-finished product in the solution, semi-finished solution itself reacts to form a layer of aluminum gallium arsenide at a predetermined oxide layer of the semifinished product. Thus, is the lifetime of the light emitting diode can be improved at a high humidity.