Experimental study and modeling of band-to-band tunneling leakage current in thin-oxide MOSFETs

Abstract The band-to-band tunneling current in MOS transistors is studied by measuring and simulating the leakage characteristics of devices with an oxide thickness in the range 100–250 A and different source-drain junctions. In case of conventional As implanted junctions a simple physically based expression for the tunneling leakage current as a function of applied voltage and oxide thickness with empirically matched parameters is derived. A 2-D process and device simulation approach has been used for analysis and reduction of the band-to-band tunneling leakage in conventional DDD and GGO transistors.