Control of channeling uniformity for advanced applications

A highly parallel ion beam and tight beam-wafer incidence angle control are required for uniform device performance when the device manufacturing process relies on channeling to achieve the desired dopant depth profile. An example of a device technology that relies on channeling is described, along with the benefits associated with the channeled dopant depth profile. The techniques used on the VIISta 810 in order to deliver the required parallelism and angle control are discussed. Thermawave thermaprobe and SIMS results are presented and show the effectiveness of these techniques.