Bonding layer structure using alloy bonding material, forming method for same, semiconductor device having said bonding layer structure, and method for manufacturing same

Provided are a bonding layer structure using the alloy bonding material, forming method for the same, semiconductor device having said bonding layer structure and method for manufacturing the same, said bonding layer structure being a structure for a bonding layer formed by bonding materials A and B to be bonded using an alloy bonding material, wherein the alloy bonding material is a Zn-Al eutectoid alloy and, at the bonding surface for each of the materials A and B to be bonded and the alloy bonding material, the dendrite arm spacing (DAS) of the Al rich phase (α phase) included in the bonding layer present within the bonding surface for the material to be bonded having the smaller surface area or within the bonding surfaces for the materials to be bonded having the same surface areas is greater than 0.06 µm and less than 0.3 µm. Thus, it is possible to assure sufficient wettability, achieve high temperature bonding strength, and improve connection reliability due to the stress-relaxation effect.