Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness

Impact ionization coefficients are important material properties that determine the breakdown voltage and safe operating area of power devices. This paper presents an anisotropy breakdown model with modified parameters that reproduces well experimental results for both peak breakdown voltages and sharp drops in breakdown voltage at high junction–termination–extension (JTE) acceptor concentrations. Using a newly developed simulation model, we optimized the edge termination and current-spreading layers (CSLs) and obtained a low specific on-resistance (RONA) of 11.6 mΩcm2 for a breakdown voltage (BVDSS) of approximately 4 kV and a high-avalanche-withstanding energy robustness of 4.6 Jcm-2.