A new storage node pad formation technology-line type SAC with oxide spacer (LSOS) and direct metal plug (DMP)-for 0.115 /spl mu/m tech and beyond

A line type self-aligned contact (SAC) with oxide spacer (LSOS) and direct metal plug (DMP) were designed and developed as a storage node pad formation technology. This paper describes the physical and electrical characteristics of this new storage node pad formation process including the overall integration scheme for DRAM cells with a minimum feature size of 0.115 /spl mu/m and provides comparative analysis with other storage node pad formation techniques.