An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states

This paper presents an analytic model for double gate (DG) tunnel FETs with 3D density of states. By evaluating two WKB integrals for mixed electron and hole tunneling, continuous current-voltage characteristics are generated with a single integral over the carrier energy. The model covers both heterojunction and homojunction TFETs. The results have been verified by numerical simulations. An expression for the maximum TFET current is derived for the 3D case. The corresponding I ds -V ds characteristics are contrasted with those of the 1D maximum current case.