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Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime
Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime
1997
G. A. Kachurin
Keywords:
Chemistry
Atomic physics
Photoluminescence
Annealing (metallurgy)
Ion
Correction
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