Enhanced Dielectric Properties of Ba(Sn0.15Ti0.85)O3 Thin Films Grown on Pt/Ti/SiO2/Si Substrates

Ba(Sn0.15Ti0.85)O3 (BTS) thin films were deposited on Pt (111)/Ti/SiO2/Si substrates by sol-gel technique with a 30 nm thick BTS seed layer. The dielectric constant of the BTS films with and without seed layer was 720 and 395, respectively. The tunability of BTS thin films with seed layer was 52.1%, which was about two times larger than that of BTS thin films without seed layer at the frequency of 100 kHz with an applied electric field of 200 kV/cm. The results showed that the seed layer had an obviously effect on the orientation and dielectric properties of the BTS films.