Modification of drain current on metal–oxide–semiconductor field-effect transistor by magnetic field induced by remanent magnetization

We propose a concept of drain current (Ids) modification in a metal–oxide–semiconductor field-effect transistor (MOSFET) using the Lorentz force from an external magnetic field and a magnetic field induced by remanent magnetization. We fabricated a Pt∕MZF∕YSZ∕MOSFET structure (MZF:Mn0.60Zn0.30Fe2.10O4,YSZ:Y0.15Zr0.85O1.93), based on this concept and examined the effect of the magnetic field on electrical properties. The magnetic field increased the Ids when the carriers were pushed away from the interface. A magnetic field of the opposite direction increased Ids slightly. This phenomenon is related to the potential change and carrier mobility. It may be useful for use in memory devices.