Design of an x-band GaN high power amplifier

In order to get high output power to load, a methodology called load-pull and source-pull is often utilized to select the optimal input and output impedance. Based on the methodology, using the GaN HEMT CGHV1F006S from CREE, simulation is performed by using microwave simulation software ADS. The results indicate that within 8.5GHz–10.2GHz, Delivered Power is higher than 37 dBm with Gain Ripple being lower than 1dB and power-added efficiency (PAE) is higher than 35% when the input power is 28dBm and the amplifier is overdriven at Class AB condition. The results show that the methodology is effective and reasonable.