A method of manufacturing a metal gate structure by adjusting a work function by silicon installation

A process for producing a semiconductor structure comprising the steps of: Forming a precursor component with a substrate (10) with active regions (12) which are separated by a channel, and a temporary gate (16) formed over the channel and within a dielectric layer (20); Removing the temporary gate (16) to form a recess (22) having a bottom and sidewalls in the dielectric layer (20); Depositing a non-silicon containing metal layer (26) in the recess (22); Depositing a metal (28) on the metal layer (26); and Incorporating silicon into the metal layer (26) by means of a pre-treatment phase with silane (SiH