InAs/GaSb superlattice focal plane array infrared detectors: manufacturing aspects
2009
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd
generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE)
growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity
has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has
been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range.
Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging
systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around
10 mK.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
7
Citations
NaN
KQI