Method of manufacturing a manufacturing method and a solar cell of the solar cell fz silicon single crystal

A reduced oxygen entering the inevitably CZ crystal, while preventing the formation of B-O pair in question on the properties of the solar cell, suppress the amount of evaporation of gallium dopant in the float zone process , providing a FZ silicon single crystal manufacturing method for a solar cell can be prevented that the silicon single crystal is a high resistance. The A Czochralski method, the steps of pulling a CZ silicon single crystal 23 which gallium is doped, as a raw material rod of CZ silicon single crystal 23, treating the float zone raw material rod at least 1.6 atm the method of manufacturing a solar cell FZ silicon single crystal 23 including the step of producing the FZ silicon single crystal 23. In the float zone process, depending on the axial directional distribution of the concentration of gallium CZ silicon single crystal, by changing the flow rate and / or concentration of dopant gas in the axial direction, the axial distribution of the concentration of gallium FZ silicon single crystal 23 production side of CZ silicon single crystal to equalize the. .Field