Identification of Electron and Hole Ionization Rates in GaAs with reference to IMPATT Diode

A computer aided simulation study of electron and hole ionization rates in GaAs with reference to the Terahertz source of power called IMPATT diode is presented in this paper. It is based on the breakdown voltage calculation using the computer simulation method developed for the DC analysis of an IMPATT diode. The comparison of simulation results reveals that the break down voltage calculated using carrier ionization rates data reported by Pearsall et al is in good agreement with the experimental reports.