Semiconductor device structure and manufacturing method thereof

The invention provides a semiconductor device structure and a manufacturing method thereof. The manufacturing method comprises the steps of providing an insulator upper silicon structure, wherein the insulator upper silicon structure comprises a silicon substrate, an oxygen burying layer and a top layer silicon; forming the semiconductor device structure; etching a silicon substrate from the second surface of the silicon substrate until exposing an oxygen burying layer so as to form an opening; forming a trap layer in the opening. The semiconductor device structure provided by the invention comprises the silicon substrate, the oxygen burying layer positioned on the first surface of the silicon substrate, a top layer silicon positioned on the oxygen burying layer, a semiconductor device positioned in the top layer silicon or the surface and the trap layer which runs through the second surface of the silicon substrate, exposes the opening of the oxygen burying layer and is positioned on the oxygen burying layer in the opening. The semiconductor device structure and the manufacturing method thereof provided by the invention have the beneficial effects that on one hand, the same effect is basically obtained, the processing steps and difficulties are simplified, and the implementation is easy; on the other hand, the trap layer is formed in the formed opening, and compared with the prior art, and a certain cost is saved.