New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

In summary, we have presented a novel wafer-level Hall mobility (μ H ) measurement methodology which can be implemented in any conventional wafer prober (no specialized equipment needed). In addition, we demonstrated a simple R SD extraction scheme with verifiable accuracy. Both techniques work directly on a single ultra-scaled MOSFET, providing an elegant solution to two very difficult but important measurements. The authors acknowledge the Office of Microelectronic Programs at NIST for financial support.