High-efficiency yellow light-emitting diodes grown on sapphire (0001) substrates
2014
High-efficiency yellow InGaN-based light-emitting diodes (LEDs) were grown by metal-organic chemical vapor deposition on conventional c-plane sapphire (0001) substrates. Optimization of the growth temperature of barrier layers eliminated surface inclusions and resulted in improved output properties of the fabricated yellow LEDs. They exhibited a high output power of 8.4 mW and external quantum efficiency of 19.3% for yellow light (570 nm) at an injection direct current of 20 mA. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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