Modelling of HfO2 film deposition from Hf(MMP)4

2003 
A reaction model and its rate constants are presented for MOCVD (metal organic chemical vapor deposition) using a liquid precursor, tetrakis (1-methoxy-2-methyl-2-propoxy) hafnium. The reaction model consists of sticking and decomposition. The former is represented by alcohol formation and the latter by β-elimination. The heat of each elementary reaction is evaluated through molecular orbital calculations, and its rate constant is experimentally determined. In addition, we improve processes based on the reaction model to reduce carbon in the film.
    • Correction
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []